| PART |
Description |
Maker |
| NM27C020 NM27C020QE150 |
2 Meg (256k x 8) UV Erasable CMOS EPROM [Life-time buy]
2097152-Bit (256K x 8) UV Erasable CMOS EPROM
2,097,152-Bit (256K x 8) UV Erasable CMOS EPROM
2 /097 /152-Bit (256K x 8) UV Erasable CMOS EPROM
|
FAIRCHILD[Fairchild Semiconductor]
|
| SMJ27C256-15JM SMJ27C256-17JM SMJ27C256-20JM SMJ27 |
256K UVEPROM
|
ASI[Advanced Semiconductor]
|
| W27C020M W27C020M-12 W27C020M-70 W27C020M-90 W27C0 |
256K X 8 ELECTRICALLY ERASABLE EPROM
|
Winbond Electronics Corp
WINBOND[Winbond]
|
| 27C256 |
256K CMOS UV Erasable PROM (32K X 8)
|
General Semiconductor Inc
|
| 27C256 |
256K CMOS UV Erasable PROM (32K X 8)
|
Philips Semiconductors
|
| 27256 |
256K (32k x 8) Bit NMOS UV Erasable PROM
|
General Semiconductor
|
| EP610IPC-10 EP610SC10 EP610SC-25 EP610SC-15T EP610 |
ASIC
UV-Erasable/OTP PLD UV-Erasable/OTP可编程逻辑器件
4kbit EEPROM; Triple Voltage Monitor with Integrated CPU Supervisor; Temperature Range: 0°C to 70°C; Package: 14-TSSOP UV-Erasable/OTP可编程逻辑器件
|
Rochester Electronics, LLC
|
| MBM29F400TA MBM29F400BA |
4M (512K×8/256K ×16) Bit Flash Memory(4M V 电源电压512K×8/256K ×16位闪速存储器)
4分（12k × 8/256K × 16）位闪存分单5V的电源电压为512k × 8/256K × 16位闪速存储器
|
Fujitsu Limited
|
| GS88132BT-150IV |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 7.5 ns, PQFP100
|
GSI Technology, Inc.
|
| AT22LV10-30SC AT22LV10-30SI AT22LV10-30KM/883 AT22 |
Thick Film Chip Resistor - RMC 1/20 4.7K 1% R
UV-Erasable/OTP PLD UV-Erasable/OTP可编程逻辑器件
|
Microsemi, Corp.
|
| ATV750B-25DI ATV750B-25DC ATV750B-7DC ATV750BQL-25 |
UV-Erasable/OTP Complex PLD UV-Erasable/OTP复杂可编程逻辑器件
|
Atmel, Corp.
|
